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College of Engineering and Computing


Faculty and Staff

Grigory Simin

Title: Professor
Undergraduate Director
Department: Electrical Engineering
College of Engineering and Computing
E-mail: simin@engr.sc.edu
Phone: 803-777-0986
Fax: 803-777-8045
Office:

Swearingen
Room 3A16
301 Main Street
Columbia, SC 29208

profile

Research Interests

  • 1998-Present: Wide bandgap materials and devices, III-Nitride power microwave devices and ICs
  • 1971–1998: Gunn effect devices, GaAs FETs, microwave and optical integrated circuits, semiconductor lasers

Education

  • MS, EE: Leningrad Electrotechnical Institute, Leningrad, Russia, 1971
  • PhD, Physics: Semiconductors and Dielectrics, GIRICOND Science & Research Institute, Leningrad, Russia, 1979

Representative Publications

  • R. Gaska, M. Gaevski, R. Jain, J. Deng, M. Islam, G. Simin, M. Shur, Novel AlInN/GaN integrated circuits operating up to 500  C, Solid-State Electronics 113 (2015) 22–27
  • M. Gaevski, J. Deng, A. Dobrinsky, R. Gaska, M. Shur, and G. Simin, Static and transient characteristics of GaN power HFETs with low-conducting coating, Phys. Status Solidi C 11, No. 3–4, 866–870 (2014)
  • M. Gaevski, J. Deng, R. Gaska, M. Shur, and G. Simin, GaN microwave varactors with insulated electrodes, Phys. Status Solidi C 11, No. 3–4, 898–901 (2014)
  • Simin, G.S. ; Islam, M. ; Gaevski, M. ; Deng, J. ; Gaska, R. ; Shur, M.S., Low RC-Constant Perforated-Channel HFET, IEEE Electron Device Letters, Vol. 35 , Issue: 4,  pp: 449 - 451 (2014)
  • G Simin, F Jahan, J Yang, M Gaevski, X Hu, J Deng, R Gaska and M Shur, III-nitride microwave control devices and ICs, Semicond. Sci. Technol. 28 (2013) 074008 (8pp)
  • F. Jahan, Y.-H.Yang, ,M. Gaevski, J. Deng, R. Gaska, M. Shur and G. Simin, 2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors, IEEE Electron Dev. Lett., V.34, pp 208-210 (2013)
  • F. Jahan, M. Gaevski, J. Deng, R. Gaska, M. Shur and G. Simin, RF Power Limiter using Capacitively -Coupled Contacts III-Nitride Varactor, Electronics Letters, Vol. 48 No. 23, pp. 1480-1481 (2012)
  • B.M. Khan, G. S. Simin, Third-order nonlinearity compensation in field effect transistors, Electron. Lett. V. 47, Issue 24, p.1343–1345 (2011)

Representative Presentations

  • Kawser Ahmed, Stephen R. Anderson, Michael R. Giordano, M. Islam, G. Simin, and M. Shur, Thermal Breakdown of III-N HEMTs on different substrates, 2016 Lester Eastman Conference on High Performance Devices, Aug, 2nd - 4th, 2016, Lehigh Univ. Bethlehem, PA, USA
  • M. Islam, G. Simin, N. Tipirneni, J. Joh, V. Krishnamurthy, S. Pendharkar, Drain - Bulk Leakage Current Mechanisms and Model for Power GaN HEMT on Si Substrate, 2015 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH-2015), May 18th – 21st, 2015, Hyatt Regency Scottsdale, Resort & Spa at Gainey Ranch Scottsdale, Arizona, USA
  • M. Shur, M. Gaevski, R. Gaska, G. Simin, H. Wong, N. Braga, and R. Mickevicius, (Invited) Power Loss Reduction in Perforated-Channel HFET Switches, ECS Trans. 2015 66(1): 179-183; doi:10.1149/06601.0179ecst
  • M. Shur, G. Simin, and R. Gaska, New Approaches to Realizing High Power Nitride Based Field Effect Transistors (Invited) ECS Trans. 2014 64(17): 29-34; doi:10.1149/06417.0029ecst 2014 ECS and SMEQ Joint International Meeting, October 5, 2014 - October 9, 2014, Cancun, Mexico
  • M. Shur, M. Gaevski, J. Deng, R. Gaska, H. Wong, N. Braga, V. Mickevicius, and G. Simin, Superior Frequency Characteristics of Perforated Channel HFET, The Lester Eastman Conference on High Performance Devices, 5 – 7 Aug. 2014, Cornell Univ. p.S4-P4
  • G. Simin, Effect of bulk conductance on GaN on Silicon HFET device performance, WOCSEMMAD 2015, February 16-19, 2015, The Wild Dunes, Isle of Palms, SC
  • M. Islam, G. Simin, Bulk Current in Power GaN HFETs on Silicon, WOCSEMMAD 2015, February 16-19, 2015, The Wild Dunes, Isle of Palms, SC

Courses Taught

  • ELCT 102 - Electrical Science lectures
  • ELCT 221 - Electric Circuits lectures
  • ELCT 563 - Semiconductor Devices lectures
  • ELCT 566 - Optoelectronic Devices lectures (2008)
  • ELCT 871 - Advances in Semiconductor Devices lectures (Deng, Simin - 2006)
  • ELCT 882 - High-speed Semiconductor Devices lectures (2005)

Appointments

  • 2011-Present: Professor w. tenure, University of South Carolina
  • 2005-2011: Associate Professor w. tenure, University of South Carolina
  • 2001-2005: Tenure-track Associate Professor, University of South Carolina
  • 1998-2001: Research Associate Prof., University of South Carolina
  • 1997-1998: Senior Research Scientist, A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, St. Petersburg, Russia
  • 1971-1997: Senior Research Scientist, GIRICOND Science & Research Institute, Ministry of Electronic Industry, Leningrad, St. Petersburg, Russia

Research Highlights

Memberships, Honors and Professional Services

  • IEEE Senior Member
  • M. Mungo Undergraduate Teaching Award, USC, 2008
  • Research Progress Award, COEIT, USC April 2005
  • Bestselling Backlist, 2002. Listing the book Getting to Know Semiconductors by M.E. Levinshtein and G. S. Simin
  • Best INVITED paper WOFE-02 Asif Khan, J. W. Yang, G. Simin, R. Gaska and M. S. Shur, "Strain Energy band Engineering Approach to AlN/GaN/InN Heterojunction Devices"
  • Best Paper WOFE-02 L. Rumyantsev, M. Shur, R. Gaska, M.E . Levinshtein, M. A. Khan, G. Simin, J. W. Yang, "Low Frequency Noise in Gallium Nitride Field-Effect Transistors"
  • The Senior Scientist Certificate from The Supreme Classification Board of the Council of Ministers of USSR, 1985
  • 2003-Present: Chair of the Faculty Hiring Committee, College of Engineering and Computing (CEC), USC
  • Member of the CEC Faculty Hiring Committees on Computational Nanoscience, Photovoltaics, Brain Plasticity
  • Member of the EE Department Undergraduate and Graduate Advisory committees
  • Editor in Chief, IEEE Sensor Council web site
  • Reviewer for IEEE Journals, Applied phys. Letters, Journal Appl. Phys, Solid-State Electronics, Electronics Letters and others

Additional Publications