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College of Engineering and Computing


Faculty and Staff

Krishna Mandal

Title: Associate Professor (Tenured), Electrical Engineering
College of Engineering and Computing
E-mail: mandalk@engr.sc.edu
Phone: 803-777-2722
Office:

Swearingen
Room 3A38
301 Main Street
Columbia, SC 29208

profile

Research Interests

  • Photovoltaic Solar Cells
  • Thin Film Device Fabrication and Characterization
  • Crystal Growth of Binary and Ternary Semiconductors and Scintillators
  • Solid-state Nuclear Detectors for:
    • Radiation Monitoring
    • Bio-medical Imaging
    • High Energy Astrophysics & Astronomy
    • Bio-crystallography
  • THz Sensors and Detectors
  • Diode-pumped Solid-State Mid- and LW-IR Lasers

Education

  • 1990-1994: Post Doctoral Fellow & RA, Materials Engineering, Ecole Polytechnique, Montreal, Canada
  • 1989-1990: CNRS Fellow, Condensed Matter Physics, Ecole Polytechnique, Paris-91128, France
  • 1987-1989: Chemical Physics Group, Tata Institute of Fundamental Research (TIFR), Homi Bhaba Road, Mumbai 400 005, India
  • 1988: Ph. D., Materials Science, Indian Institute of Technology (IIT), Kharagpur-721302, India
  • 1985-1986: RA, School of Energy Studies, Department of Electronics and Tele-Communication Engineering, Jadavpur University, Kolkata-700032, India

Representative Publications

  • Piyas Samanta and Krishna C. Mandal, "Leakage current conduction, hole injection and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress," Journal of Applied Physics, 121, 034501-1-13 (13 pages), 2017.
  • Charles R. Schmidtlein, James N. Turner, Michael O. Thompson, Krishna C. Mandal, Ida Häggström, Jiahan Zhang, John L. Humm, David H. Feiglin, and Andrzej Krol, “Initial performance studies of a wearable brain positron emission tomography camera based on autonomous thin-film digital Geiger avalanche photodiode arrays,” Journal of Medical Imaging (JMI), 4, 011003-1-13 (13 pages), 2017.
  • Amit Chandra Das, Sayantan Bhattacharya, Mukesh Jewariya, Shriganesh Prabhu, Krishna C. Mandal, Tsuneyuki Ozaki, and Prasanta Kumar Datta, "Identification of Combination Phonon Modes in Pure and Doped-GaSe Crystals by THz-Spectroscopy," IEEE Journal of Selected Topics in Quantum Electronics," 23, 8400607-1-7, 2017.
  • Cihan Oner, Towhid A. Chowdhury, Haseeb Nazir, and Krishna C. Mandal, “4H-SiC Epitaxial Layer Schottky Barrier Radiation Detectors: Fabrication and Characterization,” Invited Talk, Invited Paper, 2016 IEEE Nuclear Science Symposium & Medical Imaging Conference, and the 23rd International Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Oct. 29 – November 05, Strasbourg, France, IEEE Conf. Record, RO5-2, 5 pages, 2017.
  • Towhid A. Chowdhury, Cihan Oner, and Krishna C. Mandal, “Amorphous Selenium (a-Se) Alloy Detectors for X-rays and High Energy Nuclear Radiation Detection,” 2016 IEEE Nuclear Science Symposium & Medical Imaging Conference, and the 23rd International Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Oct. 29 – November 05, Strasbourg, France, IEEE Conf. Record, RO9-55, 5 pages, 2017.
  • Cihan Oner, Towhid A. Chowdhury, and Krishna C. Mandal, “Crystal Growth and Radiation Detection Performance Evaluation on CdTe and Cd0.9Zn0.1Te Crystals,” 2016 IEEE Nuclear Science Symposium & Medical Imaging Conference, and the 23rd International Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Oct. 29 – November 05, Strasbourg, France, IEEE Conf. Record, RO9-56, 4 pages, 2017.
  • Krishna C. Mandal, Towhid A. Chowdhury, Cihan Oner, and Frank H. Ruddy, “Design and Response Testing of Boron-Diffused Silicon Carbide Neutron Detectors for Dosimetry and Monitoring Applications,” Invited Talk, 16th International Symposium on Reactor Dosimetry (ISRD), May 7-12, 2017, Santa Fe, New Mexico, USA, Accepted for Publication in the Selected Technical Papers (STP), Proceedings ISRD, ASTM-STP, 13 pages, 2017.
  • Patent – 2017: Patent Title: “Autonomous Gamma, X-ray, and Particle Detector”; Patent No.: US 9,606,245 B1; Date of Patent: Mar. 28, 2017; Krishna C. Mandal (University of South Carolina, Columbia); with Steve Czarnecki (SUNY, Binghamton); Andrzej Krol (SUNY, Upstate Medical University); C. Ross Schmidtlein (Sloan Kettering Cancer Center); Michael Thompson (Cornell University); Mark D. Poliks; and James Turner (SUNY, Binghamton).
  • Mohammad A. Mannan, Khai V. Nguyen, Rahmi O. Pak, Cihan Oner, and Krishna C. Mandal, “Deep Levels in n-type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep Level Transient Spectroscopy and Isochronal Annealing Studies,” IEEE Transactions on Nuclear Science, 63, 1083-1090, 2016.
  • Sandip Das, Raghu N. Bhattacharya, and Krishna C. Mandal, "Performance limiting factors of Cu2ZnSn(SxSe1-x)4 solar cells prepared by thermal evaporation," Solar Energy Materials and Solar Cells, 144, 347-351, 2016.
  • Khai V. Nguyen and Krishna C. Mandal, "Ru-induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy," ECS Journal of Solid State Science and Technology, 5, P3078-P3081,2016.
  • Rahmi O. Pak and Krishna C. Mandal, "Defect Levels in Nuclear Detector Grade Cd0.9Zn0.1Te Crystals," ECS Journal of Solid State Science and Technology, 5, P3037-P3040, 2016.
  • Sandip Das, Sandeep K. Chaudhuri, and Krishna C. Mandal, "Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals," ECS Journal of Solid State Science and Technology, 5, P3059-P3063, 2016.
  • Yanhao Tang, Krishna C. Mandal, John A. McGuire, Chih-Wei Lai, "Layer- and frequency-dependent second harmonic generation in reflection from GaSe atomic crystals," Physical Review B, 94, 125302-1-6, 2016.
  • Piyas Samanta and Krishna C. Mandal, “Simulation of temperature dependent dielectric breakdown in n+-polySi/SiO2/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias,” Journal of Applied Physics, 120, 064505-1-10, 2016.
  • Khai V. Nguyen, Rahmi O. Pak, Cihan Oner, Feng Zhao, and Krishna C. Mandal, “Investigation of 12 μm 4H-SiC Epilayers for Radiation Detection and Noise Analysis of Front-end Readout Electronics,” Invited Talk, Invited Paper, 2015 IEEE Nuclear Science Symposium & Medical Imaging Conference, 22nd International Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Oct. 31 – November 07, San Diego, California, IEEE Conf. Record, R5B-1, 5 pages, 2016.
  • Rahmi O. Pak, Khai V. Nguyen, Cihan Oner, Towhid Chowdhury, and Krishna C. Mandal, “Characterization of Cd0.9Zn0.1Te Single Crystals for Radiation Detectors,” 2015 IEEE Nuclear Science Symposium & Medical Imaging Conference, 22nd International Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Oct. 31 – November 07, San Diego, California, IEEE Conf. Record, R3A-39, 7 pages, 2016.
  • Cihan Oner, Khai V. Nguyen, Rahmi O. Pak, Towhid Chowdhury, and Krishna C. Mandal, “Investigation of Metal Contacts on High-Resistivity Large-Area Amorphous Selenium Alloy Films,” 2015 IEEE Nuclear Science Symposium & Medical Imaging Conference, 22nd International Symposium on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Oct. 31 – November 07, San Diego, California, IEEE Conf. Record, R3A-41, 6 pages, 2016.
  • C. R. Schmidtlein, J. N. Turner, M. O. Thompson, K. C. Mandal, I. Haggstrom, J. Zhang, J. L. Humm, D. H. Feiglin, and A. Krol., “Performance modeling of a wearable brain PET (BET) camera,” SPIE Medical Imaging Conference, San Diego, CA, February 27 - March 3, 2016; Proc. SPIE, 9788, 978806-1-11, 2016.
  • A. C. Das, S. Bhattacharya, K. C. Mandal, S. Mondal, M. Jewariya, T. Ozaki, S. N. Bhaktha, and P. K. Datta, “Dielectric Response of Pure and Doped-GaSe Crystals Studied by an Indigenously Developed Broadband THz-TDS System,” SPIE Photonics Europe 2016, Nonlinear Optics and its Applications IV, April 4-7, 2016, Brussels, Belgium; Proc. SPIE, 9894, 98941E-1-6, 2016.
  • Piyas Samanta and Krishna C. Mandal, "Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC," Proc. SPIE, 9968, 99680E-1-12, 2016.
  • Invited Book Chapter: Chapter 2 - "Earth-Abundant Cu2ZnSn(S,Se)4 (CZTSSe) Solar Cells," Sandip Das, Raghu N. Bhattacharya, and Krishna C. Mandal, Book Title: Semiconductor Materials for Solar Photovoltaic Cells, Springer Series in Materials Science, Editors: M. Parans Paranthaman, Winnie Wong-Ng, and Raghu N. Bhattacharya, ISBN: 978-3-319-20330-0, Vol. 218, pp. 25-74, 2015.
  • Yanhao Tang, Wei Xie, Krishna C. Mandal, John A. McGuire, and C. W. Lai, "Optical and spin polarization dynamics in GaSe nanoslabs," Physical Review B 91, 195429-1-5, 2015.

Courses Taught

  • ELCT 101 - Electrical and Electronics Engineering
  • ELCT 363 - Introduction to Microelectronics
  • ELCT 510 - Renewable Energy Technologies: Photovoltaic Devices and Systems (Initiated/developed for EE)
  • ELCT 566 - Semiconductor Optoelectronics
  • ELCT 874 - Advanced Semiconductor Materials
  • ENCP 798 - Advanced Photovoltaics (Initiated/developed for Graduate Students)

Appointments

  • 2009-Present: Associate Professor (Tenured), Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA
  • 2006-2009: Director, Solid-State Sensor and Detector Division, EIC Laboratories, Inc., Norwood, MA 02062, USA
  • 1998-2006: Senior Scientist, EIC Laboratories, Inc., Norwood, MA 02062, USA
  • 1997-1998: Staff Scientist, Radiation Monitoring Devices, Inc., Watertown, MA 02172, USA
  • 1994-1997: Scientist, Electronic Materials Division, Noranda Advanced Materials, Noranda Inc., Montreal, QC H4R 2P1, Canada

Honors/Awards

  • Research Progress Award, College of Engineering and Computing, University of South Carolina, 2015
  • DARPA (Defense Advanced Research Projects Agency) Young Faculty Award (YFA) Award, 2010
  • IGERT (Integrative Graduate Education and Research Traineeship) NSF Program – as a Photovoltaics Thrust Leader, $3.0M, Sept.01, 2013 - Aug.31, 2018
  • Recipient of 31 current/past research grant awards as Principal Investigator (PI) from DOE, DOE-NEUP, DOD (Air Force, DARPA, Navy, MDA, ARO), NASA, NIH, NIST, NSERC-Canada, 3M, DuPont
  • Associate Editor of IEEE Transactions on Nuclear Science, IEEE
  • Associate Editor of the Journal of Electronic Materials (JEM), TMS, IEEE
  • Editorial Advisory Board Member of the Journal of New Materials for Electrochemical Systems (JNMES)
  • Associate Editor of the J. of Crystallization Process and Technology (JCPT)
  • Elected to the grade of Senior Member of SPIE
  • Elected to the grade of Senior Member of IEEE
  • University of South Carolina Featured Scholar, 2013
  • ASPIRE-I - as a PI (Advanced Support for Innovative Research Excellence-I) Award, University of South Carolina, 2016
  • ASPIRE-I - as a PI (Advanced Support for Innovative Research Excellence-I) Award, University of South Carolina, 2014
  • Invited speaker in several (>28) international conferences including IEEE, SPIE, MRS, ICOOPMA, ECS and ACS