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College of Engineering and Computing


Faculty and Staff

MVS Chandrashekhar

Assistant Professor, Electrical Engineering
College of Engineering and Computing

E-mail: chandra@engr.sc.edu
Phone: 803-777-1118
Fax: 803-777-8045
Office:

Swearingen
Room 3A14
301 Main Street
Columbia, SC 29208

profile

Education

  • Ph.D., Electrical Engineering, Cornell University, 2006.
  • B.S., Electrical Engineering, Worcester Polytechnic Institute (WPI), 2001.

Publications (Selected)

  • MVS Chandrashekhar, C.I. Thomas, Hui Li, Amit Lal, M.G. Spencer, Appl. Phys. Lett., 88, 033506 (2006),"Demonstration of a 4H SiC betavoltaic cell"
  • MVS Chandrashekar, C.I. Thomas, M.G. Spencer, Appl. Phys. Lett., 89, 042103 (2006), "Measurement of the mean electron-hole pair ionization energy in 4H SiC"
  • MVS Chandrashekhar, Rajesh Duggirala, Amit Lal, M.G. Spencer, Appl. Phys. Lett., 91, 053511 (2007), "4H SiC betavoltaic powered temperature transducer"
  • MVS Chandrashekhar C.I. Thomas, Hui Li, Amit Lal, M.G. Spencer, Mat Sci. For., 527-529, 1351 (2006)
  • MVS Chandrashekhar, C.I. Thomas, J. Lu, M.G. Spencer, Appl. Phys. Lett., 90, 173509 (2007), "Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face"
  • MVS Chandrashekhar, C.I. Thomas, J. Lu, Michael G. Spencer, Appl. Phys. Lett., 91, 033503 (2007) "Observation of a two dimensional electron gas formed in a polarization doped C-face 3C/4H SiC heteropolytype junction"
  • Ho Young Cha, Huaqiang Wu, MVS Chandrashekhar, YC Choi, S. Chae, G. Koley and M.G. Spencer, Nanotech. 17, 1264 (2006)"Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors"
  • Huaqiang Wu, Ho-Young Cha, MVS Chandrashekhar, G. Koley, and M. G. Spencer, J. Elec. Mat., 35, 670 (2006) "High Yield GaN Nanowire FET Fabrication and Characterizations"
  • Felbinger, J. G.; Chandra, M. V. S.; Sun, Y.; Eastman, L. F.; Wasserbauer, J.; Faili, F.; Babic, D.; Francis, D.; Ejeckam, F., IEEE Elec. Dev. Lett., 28, 948 (2007)"Comparison of GaN HEMTs on Diamond and SiC Substrates"
  • Junxia Shia, M.V.S. Chandrashekhar, Jesse Reiherzer,William J. Schaff, Jie Lu, Francis J. Disalvo, Michael G. Spencer, J. Crystal Growth, doi:10.1016/j.jcrysgro.2007.10.020 (2007) "Effect of growth temperature on Eu incorporation in GaN powders"
  • Jahan M. Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar, Farhan Rana, and Michael G. Spencer, Appl. Phys. Lett., 92, 042116 (2008), "Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene"
  • Z. Cai, S. Garzon, MVS Chandrasekhar, R. A. Webb and G. Koley, Journal of Electronic Materials, DOI 10.1007/s11664-007-0353-8 (2007)" Synthesis and properties of high quality InN nanowires and nano-networks"
  • Jahan M. Dawlaty, Shriram Shivaraman, Jared Strait, Paul George, Mvs Chandrashekhar, Farhan Rana, Michael G. Spencer, Dmitry Veksler, Yunqing Chen, arXiv:0801.3302v1 [cond-mat.mtrl-sci] (2008) "Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible"
  • Shriram Shivaraman, MVS Chandrashekhar, Michael G. Spencer, submitted, J. Elec. Mat, (2008) "Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity"
  • Paul A. George, Jared Strait, Jahan Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar, Farhan Rana, Michael G. Spencer, submitted Nano Lett. (2008), arXiv:0805.4647[cond-mat.mtrl-sci] "Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene"
  • Jie Lu, C.I. Thomas, MVS Chandrashekhar, Michael. G. Spencer, submitted Appl. Phys. Lett. (2008), "Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two dimensional electron gas by capacitance-voltage method"
  • Jie Lu, MVS Chandrashekhar, J. Parks, D. Ralph, Michael G. Spencer, submitted, Appl. Phys. Lett. (2008) "Quantum Hall effect in a two dimensional electron gas in a C-face 3C-SiC/6H-SiC polytype heterostructure"
  • Tiju Thomas, MVS Chandrashekhar, Carl B. Poitras, Michal Lipson, Michael G. Spencer, submitted to Journal of Elec. Mat. (2008) "Luminescence enhancement of Europium-doped GaN powder by oxidative passivation of the surface"
  • MVS Chandrashekhar, Shriram Shivaraman, Michael G. Spencer, Submitted J. Appl. Phys. (2008), "Disorder Trajectory in Raman Spectra of Epitaxial Graphene and Graphitic materials on 4H and 6H SiC"
  • Junxia Shi, MVS Chandrashekhar, Jesse Reiherzer, William Schaff, Jie Lu, Francis Disalvo, Michael Spencer, Phys. Stat. Sol. (c), 5, 1495 (2007) , "High intensity red emission from Eu doped GaN powders"
  • Conference Presentations (Selected)
  • MVS Chandrashekhar, C.I. Thomas, Hui Li, AMit Lal and M.G. Spencer,"Demonstration of a 4H SiC Betavoltaic Cell" Presented at International Conference for SiC and Related Materials (ICSCRM) 2005
  • C.I. Thomas, MVS Chandrashekhar, Yu. Makarov, M.G. Spencer "Increased growth rates of 4H SiC for SiH4-C3H8-H2 System in a vertical cold wall reactor using HCl", Presented at ICSCRM 2005, Pittsburgh, PA
  • MVS Chandrashekhar, CI Thomas, M.G. Spencer, "Measurement of the mean electron-hole pair ionization energy in 4H SiC" Presented at MRS Spring meeting 2006, San Francisco, CA
  • MG Spencer, MVS Chandrashekhar, CI Thomas, Jie Lu, Ho Young Cha, G. Koley, "Evidence for two dimensional electron and hole gases in 3C/4H SiC and 3C/6H SiC heteropolytype junctions", invited talk presented at WOCSEMAD, 2006, Sweden
  • MVS Chandrashekhar, Rajesh Duggirala, Amit Lal, M.G. Spencer "Self-powered temperature transducer utilizing beta-radioisotope illuminated 4H SiC betavoltaics", IEEE Sensors 2007, Atlanta, GA
  • MVS Chandrashekhar, M. Qazi, J. Lu, G. Koley, M.G. Spencer "Large Area Nanocrystalline Graphite Films on SiC for Gas Sensing Applications", accepted for presentation at IEEE Sensors 2007, Atlanta, GA
  • J.G. Felbinger, M.V.S. Chandra, Y. Sun, L.F. Eastman,J. Wasserbauer, F. Faili, D. Babic, D. Francis, F. Ejeckam, "Comparison of GaN HEMTs on Diamond and SiC Substrates", presented at WOCSDICE 2007, Venice, Italy
  • Junxia Shi, MVS Chandrashekhar, Jesse Reiherzer, William Schaff, Jie Lu, Francis Disalvo, Michael Spencer, High intensity red emission from Eu doped GaN powders", presented at Intl. Conf. Nitride Semiconductors 2007, Las Vegas, NV
  • Shriram Shivaraman, MVS Chandrashekhar, Michael G. Spencer, "Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity", presented at Electronic Materials Conference, 2008, Santa Barbara, CA
  • Shriram Shivaraman, MVS Chandrashekhar, Michael G. Spencer, "Raman and Electrical Investigation of Heteroepitaxial Graphene on SiC" presented at ECSCRM 2008, Barcelona, Spain
  • Invited Book Chapter
  • G. Koley, MVS Chandrashekhar, C.I. Thomas, Michael G. Spencer, " Polarization doped wide bandgap heterostructures and their characterization using SKPM", ed. Colin Wood, ONR (2007)

Patents

  • Betavoltaic Cell, USPTO App. # 20070080605, (pending, 2007)
  • Radioisotope-referenced Harsh Environment Temperature Sensor, USPTO# 60/845,423 (pending, 2007)
  • Carbon Containing Layers Formed on SiC for Sensing Applications, USPTO# 60/983,318 (pending,2007)
  • Polarization Doped Transistor Channels in SiC Heteropolytypes, USPTO# 11/857,412 (pending, 2007)