Graphene Growth Furnace
Temp: 1800° C
High Temperature SiC Crystal Growth Furnace
Temp: 2200° C
CVD Reactor for SiC Epitaxial Films
Up to 3” dia. wafer, T=1650°C, Precursor Gases:Si – Tetrafluorosilane, C – Propane, H2 – carriergas, intentional N-type: N2 doping
Chimney type Hot-Wall CVD reactor
Up to 1” dia. wafer, Temp:1550–1750°C, 50 –300 torrPrecursor Gases: Si – Dichlorosilane, C –Propane, H2 – carrier gas, intentional N-type:N2 doping
E-Beam Deposition
Up to four targets in single run. Currently only three targets are available. Maximum Deposition: 2A/s.
RF Magnetron Sputtering and Thermal Evaporation
2” target gun, 4” target gun; Deposition of any materials (ceramics, metals, dielectrics), up to four materials in single run. Currently only three targets are available. Maximum Deposition Rate: 100nm/min; User controlled temperature up to 400° C.
Plasma Enhanced Chemical Vapor Deposition (PECVD)
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